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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1290 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER INC Collector-base voltage Emitter-base voltage E SEM ANG H TC=25ae OND IC CONDITIONS TOR UC VALUE 1500 5 3 10 50 130 -55~130 ae ae UNIT V V A A W Open emitter Open collector Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA; IC=0 IC=2A; IB=0.75A IC=2A; IB=0.75A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE ts tf VF DC current gain Storage time Fall time IC=2A ; VCE=10V 3 3 IC=2A ILeak=0.75A,LB=5|I H MIN 5 TYP. 2SD1290 SYMBOL V(BR)EBO VCEsat VBEsat MAX UNIT V 5.0 1.5 50 1 8 7 |I |I |I V V A mA s s V Diode forward voltage CHA IN E SEM NG IF=-4A,IB=0 OND IC TOR UC 1 2.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1290 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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